DMN2022UNS-13
Home
Category
FET, MOSFET
DMN2022UNS-13
The pictures are for reference only
like

DMN2022UNS-13

Brand:Diodes
Model:DMN2022UNS-13
stock:23939
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.32
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR
series -
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 8-PowerVDFN
Warehouse China/Hong Kong
quality Original genuine
Power - maximum 1.2W
FET Type 2 N Channel(two)Co leakage
Drain source voltage (Vdss) 20V
Current at 25 ° C - continuous drain (Id) 10.7A(Ta)
On resistance (maximum) for different Ids and Vgs 10.8 mΩ @ 4A,4.5V
Vgs (th) (maximum) for different Ids 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 20.3nC @ 4.5V
Input capacitance at different Vds (Ciss) (maximum) 1870pF @ 10V
FET function standard
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer